This paper describes thermal properties of power Si MOSFET. The problem of hot spot in sub-micron scale Si MOSFET has been widely known. Recently, power Si MOSFET is a key device in a lot of area, for example car electronics. In power Si MOSFET, high voltage is applied and high current is generated. Therefore, heat generation becomes higher and thermal management is important. In this paper, thermal properties of power Si MOSFET is evaluated with Electro-Thermal Analysis and impurity dependency of temperature of power Si MOSFET is discussed. Under high electric field, electron thermal energy becomes much higher than thermal energy of crystal lattice. Therefore, in this paper, non-equilibrium energy state between electron and lattice is considered. Calculated results showed that hot spot appears in power Si MOSFET. Further, it is investigated that the impact of donor density on hot spot temperature is strong.
- Electronic and Photonic Packaging Division
Estimation of Heat Generation From Power Si MOSFET Using Electro-Thermal Analysis
Kibushi, R, Hatakeyama, T, & Ishizuka, M. "Estimation of Heat Generation From Power Si MOSFET Using Electro-Thermal Analysis." Proceedings of the ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. Volume 2: Thermal Management; Data Centers and Energy Efficient Electronic Systems. Burlingame, California, USA. July 16–18, 2013. V002T08A049. ASME. https://doi.org/10.1115/IPACK2013-73273
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