Plate heat pipes, 4.0mm × 40mm × 375mm, of maximum heat transfer capability, Qmax, of the order of hundred W have been developed for the thermal management in power electronic devices such as IGBT (Insulated Gate Bipolar Transistor), MOSFET (Metal Oxide Semiconductor Field Effect Transistor), et al. The thermal performance in both horizontal and vertical orientations were experimentally evaluated, and outstanding thermal performance of Qmax up to 600W in the vertical orientation and thermal resistance as low as 0.01K/W were confirmed. In addition to the heat pipes, thermosyphons of the same dimensions as the plate heat pipes were also fabricated and tested as a comparison. The plate heat pipes were then applied to the thermal management systems for a CPU in a 1-U server and for SiC power JFET, and stable and satisfactory cooling performance of the heat pipes for the electronics devices was demonstrated.
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ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
July 16–18, 2013
Burlingame, California, USA
Conference Sponsors:
- Electronic and Photonic Packaging Division
ISBN:
978-0-7918-5576-8
PROCEEDINGS PAPER
Development of Plate Heat Pipes for the Thermal Management of Power Electronics
Yoshihiko Maeda,
Yoshihiko Maeda
Kawamura Sangyo Co., Ltd., Yokkaichi, Japan
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Makoto Shimose
Makoto Shimose
Kawamura Sangyo Co., Ltd., Yokkaichi, Japan
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Yoshiyuki Abe
AIST, Tsukuba, Japan
Akira Nakajima
AIST, Tsukuba, Japan
Yoshihiko Maeda
Kawamura Sangyo Co., Ltd., Yokkaichi, Japan
Makoto Shimose
Kawamura Sangyo Co., Ltd., Yokkaichi, Japan
Paper No:
IPACK2013-73086, V002T08A017; 7 pages
Published Online:
January 20, 2014
Citation
Abe, Y, Nakajima, A, Maeda, Y, & Shimose, M. "Development of Plate Heat Pipes for the Thermal Management of Power Electronics." Proceedings of the ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. Volume 2: Thermal Management; Data Centers and Energy Efficient Electronic Systems. Burlingame, California, USA. July 16–18, 2013. V002T08A017. ASME. https://doi.org/10.1115/IPACK2013-73086
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