Laser drilling of silicon carbide (SiC) wafer in air (dry ablation) and underwater by using ns pulsed infrared (1064 nm) Nd: YAG laser is investigated. In order to suggest optimal parameters of via processing in SiC wafer, the effects of pulse number, laser fluence, water film thickness, and focus position are evaluated. As compared with dry ablation vias, decreasing etching rate, increasing via diameter, and generation of cracks in high-energy regime are observed in liquid-assisted processing. However, it is found that it can create vias without debris, HAZ, cracks. Also, optimal parameter set for infrared pulse laser processing under water is found to be the laser fluence of less than 10 J/cm2 and water thickness of 1mm.

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