This paper reports the mechanical properties of single crystal silicon surface changed with hydrogen atoms trapped by underwater boiling treatment. Nanoindentaion test using a Berkovich indenter in six different indentation loads ranging from 100 μN to 1000 μN was conducted to obtain the load-displacement curve. The energy dissipated in plastic deformation, i.e. plasticity energy, during indentation on silicon wafers with different carrier concentration (undoped, lightly and heavily boron doped silicon) were compared. After boiling treatment, increment in the plasticity energy was observed on silicon containing boron. This result suggests that hydrogen atoms trapped inside silicon enhanced dislocation mobility leading to larger plastic deformation.
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ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
July 16–18, 2013
Burlingame, California, USA
Conference Sponsors:
- Electronic and Photonic Packaging Division
ISBN:
978-0-7918-5575-1
PROCEEDINGS PAPER
Effect of Hydrogen on the Mechanical Properties of Silicon Crystal Surface
Hayato Izumi,
Hayato Izumi
Nagoya Institute of Technology, Nagoya, Japan
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Ryota Mukaiyama,
Ryota Mukaiyama
Nagoya Institute of Technology, Nagoya, Japan
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Nobuyuki Shishido,
Nobuyuki Shishido
Nagoya Institute of Technology, Nagoya, Japan
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Shoji Kamiya
Shoji Kamiya
Nagoya Institute of Technology, Nagoya, Japan
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Hayato Izumi
Nagoya Institute of Technology, Nagoya, Japan
Ryota Mukaiyama
Nagoya Institute of Technology, Nagoya, Japan
Nobuyuki Shishido
Nagoya Institute of Technology, Nagoya, Japan
Shoji Kamiya
Nagoya Institute of Technology, Nagoya, Japan
Paper No:
IPACK2013-73324, V001T06A008; 5 pages
Published Online:
January 20, 2014
Citation
Izumi, H, Mukaiyama, R, Shishido, N, & Kamiya, S. "Effect of Hydrogen on the Mechanical Properties of Silicon Crystal Surface." Proceedings of the ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. Volume 1: Advanced Packaging; Emerging Technologies; Modeling and Simulation; Multi-Physics Based Reliability; MEMS and NEMS; Materials and Processes. Burlingame, California, USA. July 16–18, 2013. V001T06A008. ASME. https://doi.org/10.1115/IPACK2013-73324
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