The spatially varying magnetic field within a power electronics package contains information of the semiconductor junction temperature and the interconnect currents, temperature, displacement, and strain. The design of semiconductor interconnects for point field detector based high bandwidth current and strain sensing is investigated using finite element analysis (FEA) and verified by experimental results. High bandwidth (10MHz) current sensing was achieved by interconnect design based field shaping and concentration. A displacement sensing resolution of 0.6 μm was achieved by eddy current based high frequency field shaping. Design methodologies to achieve this multifunctional integration of sensing are the primary new contribution of this work.

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