Current density levels are expected to increase by orders of magnitude in nanoelectronics. Electromigration which occur under high current density is the major concern for the nanoelectronics industry. Using a general purpose computational model, which is capable of simulating coupled electromigration and thermo-mechanical stress evolution, several dual damascene copper interconnect structures have been investigated for electromigration damage. Different diffusion boundary conditions including blocking and non blocking boundary conditions, current crowding effects, interface diffusion effects and material plasticity have been considered. Different damage criteria are used for quantifying material degradation. The computational simulation results match the experimental findings; therefore the model proves to be a useful tool for quantifying damage in nanoelectronics interconnects.
- Electronic and Photonic Packaging Division
Electromigration Damage Mechanics of Interconnects
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Basaran, C, & Lin, M. "Electromigration Damage Mechanics of Interconnects." Proceedings of the ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASME 2009 InterPACK Conference, Volume 1. San Francisco, California, USA. July 19–23, 2009. pp. 83-94. ASME. https://doi.org/10.1115/InterPACK2009-89006
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