This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.
- Heat Transfer Division and Electronic and Photonic Packaging Division
Surface Activated Flip-Chip Bonding of Laser Chips
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Higurashi, E, Nakagawa, M, Suga, T, & Sawada, R. "Surface Activated Flip-Chip Bonding of Laser Chips." Proceedings of the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. Advances in Electronic Packaging, Parts A, B, and C. San Francisco, California, USA. July 17–22, 2005. pp. 793-796. ASME. https://doi.org/10.1115/IPACK2005-73436
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