An advanced packaging technology with through-hole interconnections, which enables miniaturization and high-density packaging of electronic devices including MEMS devices and optical devices, has been developed. In this work, through-hole interconnections were applied to an image sensor packaging. Through-holes, 80μm in diameter and 200μm in depth, were formed from backside of the device wafer by Deep Reactive Ion Etching (DRIE). After an insulation layer was formed inside the holes, conductive material such as copper (Cu) or Gold-Tin (Au-Sn) alloy solder was filled into the holes by electroplating method or Molten Metal Suction Method (MMSM). This technology enables wafer-level packaging of the image sensor device. Some electrical characteristics and reliability performances including electric resistance, breakdown voltage, high-temperature storage test, heat cycle test, temperature-humidity test were examined. In this paper, fabrication processes, structural and electrical characteristics and reliability of the package will be reported.
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ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference
July 17–22, 2005
San Francisco, California, USA
Conference Sponsors:
- Heat Transfer Division and Electronic and Photonic Packaging Division
ISBN:
0-7918-4200-2
PROCEEDINGS PAPER
Wafer-Level Packaging Technology With Through-Hole Interconnections in Silicon Substrate Available to Purchase
Satoshi Yamamoto,
Satoshi Yamamoto
Fujikura, Ltd., Tokyo, Japan
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Masanobu Saruta,
Masanobu Saruta
Fujikura, Ltd., Tokyo, Japan
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Michikazu Tomita,
Michikazu Tomita
Fujikura, Ltd., Tokyo, Japan
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Tatsuo Suemasu
Tatsuo Suemasu
Fujikura, Ltd., Tokyo, Japan
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Satoshi Yamamoto
Fujikura, Ltd., Tokyo, Japan
Masanobu Saruta
Fujikura, Ltd., Tokyo, Japan
Hideyuki Wada
Fujikura, Ltd., Tokyo, Japan
Michikazu Tomita
Fujikura, Ltd., Tokyo, Japan
Tatsuo Suemasu
Fujikura, Ltd., Tokyo, Japan
Paper No:
IPACK2005-73298, pp. 757-760; 4 pages
Published Online:
March 4, 2009
Citation
Yamamoto, S, Saruta, M, Wada, H, Tomita, M, & Suemasu, T. "Wafer-Level Packaging Technology With Through-Hole Interconnections in Silicon Substrate." Proceedings of the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. Advances in Electronic Packaging, Parts A, B, and C. San Francisco, California, USA. July 17–22, 2005. pp. 757-760. ASME. https://doi.org/10.1115/IPACK2005-73298
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