Fabrication development of high efficiency quantum well (QW) thermoelectric continues with the P-type B4C/B9C and N-type Si/SiGe films. Si/SiC is being developed to replace Si/SiGe for higher temperature operation. Both isothermal and gradient life testing are underway. One couple has achieved 700 hours at TH of 300°C and TC of 50°C with no degradation. Emphasis is now shifting towards couple and module design and fabrication. Preliminary design calculations regarding the development of actual quantum well modules will be presented for both power prediction and cooling applications. These modules can be used in future energy conversion system as well as air conditioning system designs.
- Heat Transfer Division and Electronic and Photonic Packaging Division
Quantum Well Thermoelectric Devices
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Ghamaty, S, & Elsner, NB. "Quantum Well Thermoelectric Devices." Proceedings of the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. Advances in Electronic Packaging, Parts A, B, and C. San Francisco, California, USA. July 17–22, 2005. pp. 2133-2138. ASME. https://doi.org/10.1115/IPACK2005-73173
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