By the development of micro-fabrication technology, much smaller-size electronic devices will be soon available. In such a smaller device, a non-equilibrium state might appear in metal and/or semiconductor. In this case, it is difficult to estimate the device performance by the macroscopic transport equations that assume quasi-equilibrium distribution. We are developing a numerical simulation based on Boltzmann transport equation (BTE), which can analyze thermal and electric phenomena even when the state is far from equilibrium. In this study, we show a new formulation of BTE for free electron in metal and its calculation result: the thermoelectric power obtained agreed with that of experimental value: the heat flux derived by the non-equilibrium distribution was two-orders small than that estimated by thermal conductivity.
- Heat Transfer Division and Electronic and Photonic Packaging Division
Numerical Analysis of Electro-Thermal Phenomena in Metal by Boltzmann Transport Equation for Electron
Ito, K, Muramoto, R, Shiozawa, I, Kakimoto, Y, & Masuoka, T. "Numerical Analysis of Electro-Thermal Phenomena in Metal by Boltzmann Transport Equation for Electron." Proceedings of the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. Advances in Electronic Packaging, Parts A, B, and C. San Francisco, California, USA. July 17–22, 2005. pp. 2103-2107. ASME. https://doi.org/10.1115/IPACK2005-73199
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