In order to develop a new structure microwave probe, the fabrication of micro tip on the GaAs wafer surface was studied. The effects of the shape, direction, and size of etching mask to the fabricated tip were discussed in details. By finding the most suitable etching conditions, a tip having 7 μm high, 1.4 aspect ratio, and 50 nm curvature radius was formed. The experimental result indicates that the tip having the similar capability to sense the surface topography of materials as that of commercial atom force microscope (AFM) probe.
- Heat Transfer Division and Electronic and Photonic Packaging Division
Fabrication of the Tip of GaAs Microwave Probe by Wet Etching
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Ju, Y, Sato, H, & Soyama, H. "Fabrication of the Tip of GaAs Microwave Probe by Wet Etching." Proceedings of the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. Advances in Electronic Packaging, Parts A, B, and C. San Francisco, California, USA. July 17–22, 2005. pp. 1919-1922. ASME. https://doi.org/10.1115/IPACK2005-73140
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