It is known that there is the threshold current density of the electromigration damage in the via-connected line. The evaluation of the threshold current density is one of the great interests from the viewpoint of IC reliability. In this study, a metal line with two-dimensional shape, i.e. an angled metal line is treated. The evaluation method of the threshold current density is applied to the metal line. The method is based on the numerical simulation of the building-up process of the atomic density distribution in the bamboo line by using the governing parameter for electromigration damage. Comparing the evaluated results with that of straight-shaped line, the effect of line-shape on threshold current density of electromigration damage is discussed. Furthermore, the obtained difference in the threshold current density is verified experimentally.

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