Local residual stress at a surface of a silicon chip mounted on a substrate using flip chip technology was measured using a stress sensor chip that was composed of 168 strain gauges of 10-μm in length. Each strain gauge was made of polycrystalline silicon films deposited on a silicon wafer. The periodic stress distribution was measured at a surface of the sensor chip between two bumps. Five gauges were aligned at a interval of 20-μm between the bumps. When the thickness of the chip was less than 200 μm, the amplitude of the stress increased drastically, as was predicted by a finite element analysis. The amplitude of the stress reached about 150 MPa, when the thickness of the chip was thinned to 50 μm. The amplitude of the stress is a strong function of the thickness of a silicon chip and the intervals of the bumps.
- Heat Transfer Division and Electronic and Photonic Packaging Division
Measurement of Local Residual Stress of a Flip Chip Structure Using a Stress Sensing Chip
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Ueta, N, & Miura, H. "Measurement of Local Residual Stress of a Flip Chip Structure Using a Stress Sensing Chip." Proceedings of the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. Advances in Electronic Packaging, Parts A, B, and C. San Francisco, California, USA. July 17–22, 2005. pp. 1135-1140. ASME. https://doi.org/10.1115/IPACK2005-73112
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