For high-power electronic packages, it is generally accepted that the package-sink interface materials used in the thermal solution influence hot-spot temperature(s) and junction-to-ambient thermal resistance. In this article we show how these package-exterior materials can noticeably influence across-die temperature gradients also. The numerical results reveal that the across-die thermal gradient can nearly double over a narrow range of conductivities typical of commercially available package-sink interface materials. Results show that the chip hot-spot temperature can be reduced 4 to 7 C by increasing the thermal interface material conductivity from 1 to 3 W/mk. This improvement can reduce the total thermal resistance from chip to ambient.
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ASME 2003 International Electronic Packaging Technical Conference and Exhibition
July 6–11, 2003
Maui, Hawaii, USA
Conference Sponsors:
- Electronic and Photonic Packaging Division
ISBN:
0-7918-3690-8
PROCEEDINGS PAPER
Influence of Package-Sink Interface Materials on Die Performance and Reliability
Henry H. Jung,
Henry H. Jung
Sun Microsystems, Inc., Sunnyvale, CA
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Sai Ankireddi,
Sai Ankireddi
Sun Microsystems, Inc., Sunnyvale, CA
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Stanley Pecavar,
Stanley Pecavar
Sun Microsystems, Inc., Sunnyvale, CA
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James Jones
James Jones
Sun Microsystems, Inc., Sunnyvale, CA
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Henry H. Jung
Sun Microsystems, Inc., Sunnyvale, CA
Sai Ankireddi
Sun Microsystems, Inc., Sunnyvale, CA
Stanley Pecavar
Sun Microsystems, Inc., Sunnyvale, CA
James Jones
Sun Microsystems, Inc., Sunnyvale, CA
Paper No:
IPACK2003-35304, pp. 641-645; 5 pages
Published Online:
January 5, 2009
Citation
Jung, HH, Ankireddi, S, Pecavar, S, & Jones, J. "Influence of Package-Sink Interface Materials on Die Performance and Reliability." Proceedings of the ASME 2003 International Electronic Packaging Technical Conference and Exhibition. 2003 International Electronic Packaging Technical Conference and Exhibition, Volume 2. Maui, Hawaii, USA. July 6–11, 2003. pp. 641-645. ASME. https://doi.org/10.1115/IPACK2003-35304
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