Numerical calculation of silicon MOSFET is performed. Conjugate nature of the thermal and electrical behavior in the device is considered, and the lattice temperatures is solved as well as the electron concentration and the electron temperature. The calculated results shows the importance of considering both the electron and lattice temperatures for device modeling; the electron temperature has a significant impact on the calculated electron concentration and the lattice temperature. Submicron local hot spot is observed in the device, and its characteristics are discussed.

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