Photovoltaic Phenomena in Thin Film ZnTe-CdSe Heterojunctions Available to Purchase

Thin layer ZnTe-CdSe heterojunctions were produced by vapor phase epitaxial growth of ZnTe and CdSe layers on mica and single-crystal ZnSe substrates. These heterojunctions photosensitivity covers the wavelength region of 0.56–0.85 μm. The shape of photosensitivity spectral dependence of ZnTe-CdSe heterojunction depends on the components thickness and their doping level. Thin layer ZnTe-CdSe epitaxial heterojunction parameters under illumination of 80 mW/cm² (AM1.5) are: FF=0.53, U_oc=0.72V, I_sc=14.8 mA/cm², efficiency η=7.1%. Thin film polycrystalline ZnTe-CdSe heterojunctions having the efficiency η=4.3%, U_oc=0.54 V, I_sc=10.6 mA/cm² were fabricated by using As or Cu doped ZnTe layers and In doped CdSe layers produced by HWT.