Copper indium gallium selenide sulfide, CuIn1−xGaxSe2−ySy (CIGSS) absorber layer was prepared on stainless steel (SS) and SiO2-coated titanium substrates. Comparative study was carried out to analyze the variation in the crystal quality depending on the substrate. Identical parameters were used for deposition and selenization/sulfurization of metallic precursors. This paper presents the observations made on the basis of surface morphology using scanning electron microscopy, crystal quality by x-ray diffraction and chemical composition and concentration-depth profiles by x-ray energy dispersive spectroscopy and Auger electron spectroscopy respectively. Film fabricated on both the substrate had chalcopyrite structure with variation of stoichiometry as well as morphology. Selenization/sulfurization cycle must be modified depending upon the substrate to obtain high quality CIGSS film.
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ASME 2005 International Solar Energy Conference
August 6–12, 2005
Orlando, Florida, USA
Conference Sponsors:
- Solar Energy Division
ISBN:
0-7918-4737-3
PROCEEDINGS PAPER
Structural Comparison of CIGSS Thin Film Absorber Layer Fabricated on SS and Ti Substrates
Ankur A. Kadam,
Ankur A. Kadam
University of Central Florida, Cocoa, FL
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Neelkanth G. Dhere
Neelkanth G. Dhere
University of Central Florida, Cocoa, FL
Search for other works by this author on:
Ankur A. Kadam
University of Central Florida, Cocoa, FL
Neelkanth G. Dhere
University of Central Florida, Cocoa, FL
Paper No:
ISEC2005-76178, pp. 491-494; 4 pages
Published Online:
October 15, 2008
Citation
Kadam, AA, & Dhere, NG. "Structural Comparison of CIGSS Thin Film Absorber Layer Fabricated on SS and Ti Substrates." Proceedings of the ASME 2005 International Solar Energy Conference. Solar Energy. Orlando, Florida, USA. August 6–12, 2005. pp. 491-494. ASME. https://doi.org/10.1115/ISEC2005-76178
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