Copper indium gallium selenide sulfide, CuIn1−xGaxSe2−ySy (CIGSS) absorber layer was prepared on stainless steel (SS) and SiO2-coated titanium substrates. Comparative study was carried out to analyze the variation in the crystal quality depending on the substrate. Identical parameters were used for deposition and selenization/sulfurization of metallic precursors. This paper presents the observations made on the basis of surface morphology using scanning electron microscopy, crystal quality by x-ray diffraction and chemical composition and concentration-depth profiles by x-ray energy dispersive spectroscopy and Auger electron spectroscopy respectively. Film fabricated on both the substrate had chalcopyrite structure with variation of stoichiometry as well as morphology. Selenization/sulfurization cycle must be modified depending upon the substrate to obtain high quality CIGSS film.
Structural Comparison of CIGSS Thin Film Absorber Layer Fabricated on SS and Ti Substrates
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Kadam, AA, & Dhere, NG. "Structural Comparison of CIGSS Thin Film Absorber Layer Fabricated on SS and Ti Substrates." Proceedings of the ASME 2005 International Solar Energy Conference. Solar Energy. Orlando, Florida, USA. August 6–12, 2005. pp. 491-494. ASME. https://doi.org/10.1115/ISEC2005-76178
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