CuInS2 thin films were fabricated by sulphurization of S/In/Cu Stacked elemental layers (SEL) on slide glass substrates by annealing in vacuum of 10−3 Torr at temperature of 50 °C ∼ 350 °C. Some S/In/Cu SEL were vacuum annealed under a sulfur atmosphere. The thin films thus annealed were analyzed by measuring structural, electrical and optical properties. When CuInS2 thin films were made under a sulfur atmosphere, lattice constant of a and grain size of the thin film were a little larger than those in only vacuum annealing. The largest lattice constant of a and grain size was 5.63 Å and 1.2 μm respectively. Also, when the thin films were made under a sulfur atmosphere, conduction types were all p-type with resistivities of around 10−1 Ωcm and optical energy band gaps of the films were a little larger than those in only vacuum and the largest optical energy band gap of CuInS2 thin film was 1.53 eV.
Properties of CuInS2 Thin Films Fabricated by SEL Method
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Park, G, Jeong, W, Yang, H, Jung, H, Lee, J, & Kim, S. "Properties of CuInS2 Thin Films Fabricated by SEL Method." Proceedings of the ASME 2005 International Solar Energy Conference. Solar Energy. Orlando, Florida, USA. August 6–12, 2005. pp. 441-445. ASME. https://doi.org/10.1115/ISEC2005-76047
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