Recent research on light-induced degradation of crystalline Si solar cells and modules is reviewed. The first paper on the issue was published in 1973 when efficiency of solar cells using 1 Ω·cm, B-doped CZ wafers degraded under illumination. Since mid 1990’s, several studies have been performed to investigate the mechanism of the light degradation and also to provide practical solutions to annihilate the degradation. Numerous experiments have been carried out regarding the effects of impurities including B, Ga, P, O and processing parameters such as annealing temperature. Recent analysis on weathered solar modules supported the LID is in agreement with a model attributing the lifetime degradation to oxygen and boron complex. The reduction of the concentration of B and O or substitution of boron by gallium are found to suppress the degradation and to realize cell efficiency further.
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ASME 2003 International Solar Energy Conference
March 15–18, 2003
Kohala Coast, Hawaii, USA
Conference Sponsors:
- Solar Energy Division
ISBN:
0-7918-3676-2
PROCEEDINGS PAPER
Light-Induced Performance Degradation and Its Annihilation of Crystalline Silicon Solar Devices
T. Saitoh,
T. Saitoh
Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
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H. Hashigami,
H. Hashigami
Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
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M. Dhamrin
M. Dhamrin
Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
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T. Saitoh
Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
H. Hashigami
Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
M. Dhamrin
Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
Paper No:
ISEC2003-44221, pp. 439-444; 6 pages
Published Online:
January 5, 2009
Citation
Saitoh, T, Hashigami, H, & Dhamrin, M. "Light-Induced Performance Degradation and Its Annihilation of Crystalline Silicon Solar Devices." Proceedings of the ASME 2003 International Solar Energy Conference. Solar Energy. Kohala Coast, Hawaii, USA. March 15–18, 2003. pp. 439-444. ASME. https://doi.org/10.1115/ISEC2003-44221
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