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Proceedings Papers

Finite Element Analysis and Fatigue Life Prediction of a Laterally Conducting GaN-Based Power Package Under Thermal Cycling

Pouria Zaghari, Sourish S. Sinha, Jong Eun Ryu, Paul D. Franzon, Douglas C. Hopkins
Proc. ASME. IMECE2023, Volume 12: Micro- and Nano-Systems Engineering and Packaging, V012T13A021, October 29–November 2, 2023
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2023-111682
https://doi.org/10.1115/IMECE2023-111682
View Paper titled, Finite Element Analysis and Fatigue Life Prediction of a Laterally Conducting GaN-Based Power Package Under Thermal Cycling
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Topics: Fatigue life, Finite element analysis, Gallium nitride, Reliability, Solders, Constitutive equations, Cycles, Durability, Failure, Fatigue
Proceedings Papers

Intensity and Uniformity of Gallium Nitride Deposition in Sublimation Sandwich Growth

B. Wu, H. Zhang
Proc. ASME. IMECE2001, Heat Transfer: Volume 6 — Heat Transfer in Materials Processing, 123-131, November 11–16, 2001
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2001/HTD-24343
https://doi.org/10.1115/IMECE2001/HTD-24343
View Paper titled, Intensity and Uniformity of Gallium Nitride Deposition in Sublimation Sandwich Growth
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Topics: Gallium nitride, Temperature, Gallium, Vapors, Crystal growth, Crystals, Equilibrium (Physics), Evaporation, Furnaces, Melting
Proceedings Papers

Numerical Simulations of Turbulent Natural Convection in Laterally-Heated Cylindrical Enclosures With Baffles for Crystal Growth

Hooman Enayati, Abhilash J. Chandy, Minel J. Braun
Proc. ASME. IMECE2016, Volume 8: Heat Transfer and Thermal Engineering, V008T10A052, November 11–17, 2016
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2016-66106
https://doi.org/10.1115/IMECE2016-66106
View Paper titled, Numerical Simulations of Turbulent Natural Convection in Laterally-Heated Cylindrical Enclosures With Baffles for Crystal Growth
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Topics: Computer simulation, Crystal growth, Natural convection, Turbulence, Gallium nitride, Computational fluid dynamics, Crystals, Flow (Dynamics), Light-emitting diodes, Temperature distribution
Proceedings Papers

Influence of Species Transport and Inlet Condition on the MOCVD-Grown GaN Uniformity

Zhi Zhang, Haisheng Fang, Jiang Zheng, Han Yan, Zhiyin Gan
Proc. ASME. IMECE2016, Volume 8: Heat Transfer and Thermal Engineering, V008T10A050, November 11–17, 2016
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2016-65833
https://doi.org/10.1115/IMECE2016-65833
View Paper titled, Influence of Species Transport and Inlet Condition on the MOCVD-Grown GaN Uniformity
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Topics: Gallium nitride, Metalorganic chemical vapor deposition, Flow (Dynamics), Temperature, Chemical reactions, Fluid dynamics, Heat transfer, Three-dimensional models
Proceedings Papers

Numerical Analysis on the Development of the Large-Scale Showerhead for Depositing AlGaInN Films

Chulsoo Byun, Dae Hyeon Kim, Kang Woo Joo, Kwang-Sun Kim
Proc. ASME. IMECE2013, Volume 8A: Heat Transfer and Thermal Engineering, V08AT09A046, November 15–21, 2013
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2013-65515
https://doi.org/10.1115/IMECE2013-65515
View Paper titled, Numerical Analysis on the Development of the Large-Scale Showerhead for Depositing AlGaInN Films
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Topics: Chemical vapor deposition, Computational fluid dynamics, Economics , Gallium nitride, Gases, Manufacturing, Metalorganic chemical vapor deposition, Metals, Numerical analysis, Porous materials
Proceedings Papers

Role of Internal Radiation With or Without Melt Inclusions During Czochralski Sapphire Crystal Growth

H. S. Fang, Q. J. Zhang, L. L. Zheng, M. J. Zhang, J. Tian
Proc. ASME. IMECE2013, Volume 8C: Heat Transfer and Thermal Engineering, V08CT09A073, November 15–21, 2013
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2013-62088
https://doi.org/10.1115/IMECE2013-62088
View Paper titled, Role of Internal Radiation With or Without Melt Inclusions During Czochralski Sapphire Crystal Growth
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Topics: Crystal growth, Radiation (Physics), Sapphire, Gallium nitride, Shapes, Crystals, Light-emitting diodes, Manufacturing, Modeling, Temperature
Proceedings Papers

Transient Behavior of the Gallium Nitride Chemical Vapor Deposition Process

Jiandong Meng, Yogesh Jaluria
Proc. ASME. IMECE2013, Volume 8C: Heat Transfer and Thermal Engineering, V08CT09A074, November 15–21, 2013
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2013-63236
https://doi.org/10.1115/IMECE2013-63236
View Paper titled, Transient Behavior of the Gallium Nitride Chemical Vapor Deposition Process
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Topics: Chemical vapor deposition, Gallium nitride, Transients (Dynamics), Metalorganic chemical vapor deposition, Chemical reactions, Fluid dynamics, Heat, Mass transfer, Steady state, Temperature
Proceedings Papers

Modeling the Hotspot Temperature in AlGaN/GaN High Electron Mobility Transistors Using a Non-Gray Phonon BTE Solver

Fatma Nazli Donmezer, Munmun Islam, Samuel Graham, Douglas Yoder
Proc. ASME. IMECE2012, Volume 9: Micro- and Nano-Systems Engineering and Packaging, Parts A and B, 1175-1188, November 9–15, 2012
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2012-89720
https://doi.org/10.1115/IMECE2012-89720
View Paper titled, Modeling the Hotspot Temperature in AlGaN/GaN High Electron Mobility Transistors Using a Non-Gray Phonon BTE Solver
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Topics: Electron mobility, Gallium nitride, Modeling, Phonons, Temperature, Transistors, Electrons, Electromagnetic spectrum, Gates (Closures), Electric fields
Proceedings Papers

High-Q Gallium Nitride Nanowire Resonators With Piezoresistive Readout

Jason M. Gray, Charles T. Rogers, Kris A. Bertness, Norman A. Sanford
Proc. ASME. IMECE2011, Volume 11: Nano and Micro Materials, Devices and Systems; Microsystems Integration, 323-327, November 11–17, 2011
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2011-65296
https://doi.org/10.1115/IMECE2011-65296
View Paper titled, High-Q Gallium Nitride Nanowire Resonators With Piezoresistive Readout
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Topics: Gallium nitride, Nanowires, Resonance, Manufacturing, Wire, Cooling, Dielectrophoresis, Gates (Closures), Q-factor, Temperature
Proceedings Papers

Capacitive Readout Technique for Studies of Dissipation in GaN Nanowire Mechanical Resonators

Joshua R. Montague, Kris A. Bertness, Norman A. Sanford, Victor M. Bright, Charles T. Rogers
Proc. ASME. IMECE2011, Volume 11: Nano and Micro Materials, Devices and Systems; Microsystems Integration, 329-333, November 11–17, 2011
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2011-65420
https://doi.org/10.1115/IMECE2011-65420
View Paper titled, Capacitive Readout Technique for Studies of Dissipation in GaN Nanowire Mechanical Resonators
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Topics: Energy dissipation, Gallium nitride, Nanowires, Resonance, Nanoscale phenomena, Temperature, Crystals, Damping, Locks (Waterways), Microwave measurement
Proceedings Papers

Numerical Simulation of GaN Growth in a MOCVD Process

Jiandong Meng, Yogesh Jaluria
Proc. ASME. IMECE2011, Volume 11: Nano and Micro Materials, Devices and Systems; Microsystems Integration, 205-212, November 11–17, 2011
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2011-63040
https://doi.org/10.1115/IMECE2011-63040
View Paper titled, Numerical Simulation of GaN Growth in a MOCVD Process
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Topics: Computer simulation, Gallium nitride, Metalorganic chemical vapor deposition, Computational fluid dynamics, Temperature, Chemical kinetics, Computer software, Flow (Dynamics), Hydrogen, Optimization
Proceedings Papers

The Impact of GaN/Substrate Thermal Boundary Resistance on a HEMT Device

Horacio C. Nochetto, Nicholas R. Jankowski, Avram Bar-Cohen
Proc. ASME. IMECE2011, Volume 10: Heat and Mass Transport Processes, Parts A and B, 241-249, November 11–17, 2011
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2011-65562
https://doi.org/10.1115/IMECE2011-65562
View Paper titled, The Impact of GaN/Substrate Thermal Boundary Resistance on a HEMT Device
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Topics: Gallium nitride, Interfacial thermal resistance, Temperature, Heat, Junctions, Design, Electron mobility, Engineering simulation, Finite element analysis, Simulation
Proceedings Papers

Examining the Role of Free Carrier Concentration on the Phonon Lifetimes in GaN Using Raman Spectroscopy

Thomas Beechem, Samuel Graham
Proc. ASME. IMECE2007, Volume 11: Micro and Nano Systems, Parts A and B, 617-623, November 11–15, 2007
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2007-42646
https://doi.org/10.1115/IMECE2007-42646
View Paper titled, Examining the Role of Free Carrier Concentration on the Phonon Lifetimes in GaN Using Raman Spectroscopy
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Topics: Gallium nitride, Phonons, Raman spectroscopy, Cascades (Fluid dynamics), Electromagnetic scattering, Modeling, Operating temperature, Radiation scattering, Scattering (Physics), Uncertainty
Proceedings Papers

Growth Kinetics and Thermal Stress in AlN Bulk Crystal Growth

Bei Wu, Ronghui Ma, Hui Zhang, Michael Dudley, Raoul Schlesser, Zlatko Sitar
Proc. ASME. IMECE2002, Heat Transfer, Volume 5, 53-63, November 17–22, 2002
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2002-33700
https://doi.org/10.1115/IMECE2002-33700
View Paper titled, Growth Kinetics and Thermal Stress in AlN Bulk Crystal Growth
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Topics: Crystal growth, Thermal stresses, Crystals, Flow (Dynamics), Stress, Temperature distribution, Boundary-value problems, Chemical reactions, Dislocation density, Gallium nitride
Proceedings Papers

Thermal Boundary Resistance of Thin Metal Films and Thermally Conductive Dielectric Materials

Robert J. Stevens, Andrew N. Smith, Arthur W. Lichtenberger, Pamela M. Norris
Proc. ASME. IMECE2003, Heat Transfer, Volume 4, 239-245, November 15–21, 2003
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2003-41856
https://doi.org/10.1115/IMECE2003-41856
View Paper titled, Thermal Boundary Resistance of Thin Metal Films and Thermally Conductive Dielectric Materials
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Topics: Dielectric materials, Interfacial thermal resistance, Metals, Top-tensioned risers, Electrical conductance, Temperature, Gallium nitride, Metallic films, Sapphire, Signals
Proceedings Papers

Heat Dissipation in GaN Power Semiconductor Devices

Adam Christensen, Samuel Graham
Proc. ASME. IMECE2004, Heat Transfer, Volume 2, 257-266, November 13–19, 2004
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2004-61525
https://doi.org/10.1115/IMECE2004-61525
View Paper titled, Heat Dissipation in GaN Power Semiconductor Devices
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Topics: Energy dissipation, Gallium nitride, Heat, Power semiconductor devices, Temperature, Cooling, Junctions, Dislocations, Finite element analysis, Heat flux
Proceedings Papers

Modeling of a Gallium Nitride Epitaxy Growth System

D. Cai, B. Wu, L. L. Zheng, H. Zhang, W. J. Mecouch, Z. Sitar
Proc. ASME. IMECE2004, Heat Transfer, Volume 1, 133-138, November 13–19, 2004
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2004-59819
https://doi.org/10.1115/IMECE2004-59819
View Paper titled, Modeling of a Gallium Nitride Epitaxy Growth System
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Topics: Epitaxy, Gallium nitride, Modeling, Boundary-value problems, Gallium, Heat transfer, Vapors, Computer simulation, Design, Engineering simulation