Abstract

A dual-phase-lag diffusion (DPLD) model, which extends Fick’s law by including two lagging times, τj for the mass flux vector and τρ for the density gradient, is developed to predict thin film growth. Depending upon the phase lag ratio τρj, the proposed model uniquely characterizes four types of growth kinetics as reported in the literature. The model validation with the experimental data of silicon oxidation and Hg1-xCdxTe film deposition demonstrates that the DPLD model captures the anomalous behavior of thin film growth from the very beginning of the process to relatively long times very well.

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