Abstract
An ellipsometric method has been developed that utilizes a thermoreflectance technique to measure the differential reflectance from a polarization modulated laser beam at near grazing probe angles. The technique is investigated here as a potential method for monitoring small changes in temperature about a control point on closely stacked silicon wafers in a heated furnace during batch processing. The technique is demonstrated on both polished and unpolished wafers with a temperature resolution of ∼0.5°C. Temperature measurement and sensitivity is investigated for furnace temperatures ranging from 20°C to 1000°C.
Volume Subject Area:
Microscale Thermal Phenomena in Electronic Systems
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Copyright © 1996 by The American Society of Mechanical Engineers
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