To obtain desired photoresist grating by scanning beam interference lithography (SBIL), a precise exposure dose is demanded. For it is difficult to apply the real-time exposure monitoring technology in SBIL, a precise dynamic exposure model is needed to predict the groove profile of the photoresist grating. In this paper, a novel dynamic exposure model is established based on the characteristics of SBIL. Considering the nonlinear properties of the photoresist, a three-dimensional development process simulation is conducted based on cellular automata (CA) model. Based on this model, the influence mechanism of exposure parameters on groove profile can be analyzed, which provides an effective analysis method for optimizing exposure parameters of SBIL.

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