The two-dimensional layer of Molybdenum disulfide (MoS2) has attracted much interest due to its direct-gap property and potential applications in the field of catalysis, nanotribology, microelectronics, lithium batteries, hydrogen storage, medical, high-performance flexible electronics and optoelectronics. In this paper, based on few-layer MoS2 acquired by mechanical exfoliation method, a MoS2 liquid-gated field effect transistor (L-FET) is fabricated. Simultaneously, the few-layer MoS2 is characterized by Raman spectral. Then, the performance of MoS2-based L-FET devices is investigated by a source meter instrument in the different back gate voltage of 0.1mol/L NaCl solution. The result reveals that the Schottky barriers is formed between platinum and few-layer MoS2 and the back gate voltage has a great control effect with the drain-to-source current of MoS2 field effect transistor.

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