In this paper, we investigated a new capacitive pressure sensor structure on a silicon carbide (SiC) platform for high sensitivity and harsh environment operation capability. The superior material properties of SiC ensure robustness of the new sensor to withstand large-scale pressure at high temperature and in chemical/biological medium. The sensor structure consists of a circular SiC diaphragm suspended by four arms over a SiC substrate, with design to enable diaphragm to deflect nearly uniformly with applied pressure. This configuration results in improved sensing properties. With high sensitivity and operation capability in hostile environment, this new pressure sensor is promising for use in a wide range of applications such as automotive, nuclear station, aerospace, and oil/gas exploration, etc.
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ASME 2013 International Mechanical Engineering Congress and Exposition
November 15–21, 2013
San Diego, California, USA
Conference Sponsors:
- ASME
ISBN:
978-0-7918-5639-0
PROCEEDINGS PAPER
Silicon Carbide MEMS Capacitive Pressure Sensor for Harsh Environments Available to Purchase
Zhibang Chen,
Zhibang Chen
Washington State University, Vancouver, WA
Search for other works by this author on:
Feng Zhao
Feng Zhao
Washington State University, Vancouver, WA
Search for other works by this author on:
Zhibang Chen
Washington State University, Vancouver, WA
Wei Du
Washington State University, Vancouver, WA
Feng Zhao
Washington State University, Vancouver, WA
Paper No:
IMECE2013-64764, V010T11A042; 5 pages
Published Online:
April 2, 2014
Citation
Chen, Z, Du, W, & Zhao, F. "Silicon Carbide MEMS Capacitive Pressure Sensor for Harsh Environments." Proceedings of the ASME 2013 International Mechanical Engineering Congress and Exposition. Volume 10: Micro- and Nano-Systems Engineering and Packaging. San Diego, California, USA. November 15–21, 2013. V010T11A042. ASME. https://doi.org/10.1115/IMECE2013-64764
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