Recent research progress on flexoelectricity suggests that dramatic enhancement of effective piezoelectric properties desirable for advanced M/NEMS, in principle, is attainable through flexoelectric (FE) effect and scale effect. In this paper, the transverse flexoelectric coefficient μ12 of barium strontium titanate (BST) microcantilevers with thicknesses ranging from 1.4 mm down to 30 μm was measured at room temperature. It was found that μ12 remains to be constant (8.5 μC/m) for all fabricated microcantilevers. Effective piezoelectric coefficients of these microcantilevers were also calculated, indicating that significantly increased effective piezoelectric coefficients can be obtained from microcantilevers with thickness of microns and nanometers, which is promising for micro/nano electromechanical systems (M/NEMS).
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ASME 2011 International Mechanical Engineering Congress and Exposition
November 11–17, 2011
Denver, Colorado, USA
Conference Sponsors:
- ASME
ISBN:
978-0-7918-5497-6
PROCEEDINGS PAPER
Flexoelectric Materials and Structures for M/NEMS
Wenbin Huang,
Wenbin Huang
North Carolina State University, Raleigh, NC
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Kyungrim Kim,
Kyungrim Kim
North Carolina State University, Raleigh, NC
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Shujun Zhang,
Shujun Zhang
Pennsylvania State University, University Park, PA
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Fuh-Gwo Yuan,
Fuh-Gwo Yuan
North Carolina State University, Raleigh, NC
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Xiaoning Jiang
Xiaoning Jiang
North Carolina State University, Raleigh, NC
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Wenbin Huang
North Carolina State University, Raleigh, NC
Kyungrim Kim
North Carolina State University, Raleigh, NC
Shujun Zhang
Pennsylvania State University, University Park, PA
Fuh-Gwo Yuan
North Carolina State University, Raleigh, NC
Xiaoning Jiang
North Carolina State University, Raleigh, NC
Paper No:
IMECE2011-64520, pp. 761-766; 6 pages
Published Online:
August 1, 2012
Citation
Huang, W, Kim, K, Zhang, S, Yuan, F, & Jiang, X. "Flexoelectric Materials and Structures for M/NEMS." Proceedings of the ASME 2011 International Mechanical Engineering Congress and Exposition. Volume 11: Nano and Micro Materials, Devices and Systems; Microsystems Integration. Denver, Colorado, USA. November 11–17, 2011. pp. 761-766. ASME. https://doi.org/10.1115/IMECE2011-64520
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