Sputtering Power on Electrical Characteristics of Er,Ti Co-Doped HfO₂ Films Available to Purchase

Er,Ti co-doped HfO₂ films, as candidate of the gate dielectric material for CMOS technology, were deposited on n-Si (100) by radio frequency magnetron sputtering. The dielectric characteristics of the films were compared with different sputtering powers. The surface morphology of HfTiErO was observed by atomic force microscopy (AFM). The thickness of the films was determined by SGC-10 film calibrator. The results show that the growth rate nearly has a linear increase with the sputtering power rising, the film with sputtering power 40W, 100W or 120W has better surface topography, the sputtering power of 60W and 80W leads to better interfacial and electrical properties. The results of the present work indicate that 60W is the optimal condition for preparing the HfTiErO film.