In this work we present results from a pulsed etching system with XeF2 for an expanded temperature range while at the same time determining the roughness of the substrate left behind. The experimental apparatus used for the work presented in this paper is capable of temperature ranges from approximately 100 to 800 K. Data was taken at a constant etching pressure of 1.2 Torr so the effect of temperature on roughness and etch rate could be studied. Etch rates and surface roughnesses were characterized using a vertical scanning and phase shifting interferometer, respectively.

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