In this article an all-silicon resonator for integrated applications based on the recently developed p-n junction actuation method is developed. The advantages and disadvantages of using this method over other possible actuation techniques are fully illustrated. The theory of the equations governing the transduction mechanism is explained and our new simulation method is presented. The validity of this method is verified by simulation of our earlier work. The simulation results of our new work are presented as well and a fabrication method is given in order build the device.

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