The current miniaturization trend of engineering systems and ever increasing appearance of nano-devices urge for the development of new computational techniques capable of modelling sub-continuum physical phenomena. Among different methods available in the literature, the lattice Boltzmann method has received a lot of attention in recent years because of its versatility and ease of use. The present work describes the lattice Boltzmann methodology and implementation techniques for the phonon transport modelling with an emphasis on the heat transfer modelling in nano-structured semiconductor devices. Numerical methodology and lattice structure selection are discussed in detail; numerical examples are presented to demonstrate the method implementation.

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