With the rapid development of large scale integrated circuit (IC), there are strong demands for silicon wafers developing towards large diameter and thin wafer direction. The fixed-abrasive diamond wire saw (FAWS) technology is often used to cut the large diameter silicon. Currently, the detection of damage layers mainly depends on experiments, which are not only costly and time-consuming, but also would cause the new damage during the detection process, in the FAWS technology. In this paper, the damage layer of the material is studied by using the multi-grain finite element method. The interaction of grains and the whole wire cutting process are analyzed by means of the coupling shear stress field, which got by the simulation results. The influence of the process parameters on the damage layer of the crystal silicon is analyzed by FEM.

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