In rapid thermal processing of semiconductor wafers, it is very important to keep a given temperature rising speed of the wafer during the heating process. We calculated the effect of various heating control methods on the error of the temperature rising speed of the wafer. We calculated the PID control, the control method by correcting with temperature rising speed, the control using a thermal model, the control using a prepared correlation equation, and the combined methods. We found that the combined method with a thermal model and rising speed is a good method to decrease the error of the temperature rising speed. The minimum error of the temperature rising speed at 700°C is less than 0.1°C/s during the temperature rising process of 100°C/s and the monitoring time step of 0.05 s. We calculated the effects of control-delay-time and measuring error of the monitoring temperature on the error of the temperature rising speed.

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