Multi-element resistor rosettes on silicon are widely utilized to measure integrated circuit die stress in electronic packages and other applications. Previous analyses of many sources of error have led to rosette optimization and the realization that temperature compensated stress extraction should be used whenever possible. However, error in stress extraction due to the inherent uncertainty in knowledge of the values of the piezoresistive coefficients has not been explored in detail. In this work, direct analysis of the sensitivities of the extracted stresses to uncertainties in the piezoresistive coefficients is presented. The sensitivities are found to be stress dependent and therefore vary widely from very small to very large over the die surface. The results indicate that temperature compensated rosette configurations should be utilized whenever possible. Study of these sensitivities may lead to new rosette optimizations.

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