The ball impact test (BIT) was developed based on the demand of a package-level measure of the board-level reliability of solder joints in the sense that it leads to brittle intermetallic fracturing, similar to that from a board-level drop test. The BIT itself stands alone as a unique and novel test methodology in characterizing strengths of solder joints under a high-speed shearing load. In this work, we present BIT results conducted at an impact velocity of 500 mm/s on Sn-4Ag-0.5Cu, Sn-1Ag-0.5Cu, Sn-1Ag-0.5Cu-0.05Ni, Sn-1.2Ag-0.5Cu-0.05Ni, and Sn-1Ag-0.5Cu-0.05Ge package-level solder joints, bonded on substrate pads of immersion tin (IT) and direct solder on pad (DSOP) surface finishes. Differences of BIT results with respect to multi-reflow are also reported.
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ASME 2007 International Mechanical Engineering Congress and Exposition
November 11–15, 2007
Seattle, Washington, USA
Conference Sponsors:
- ASME
ISBN:
0-7918-4299-1
PROCEEDINGS PAPER
Characterizations of Ball Impact Responses of Tin-Silver-Copper Solder Joints Doped With Nickel or Germanium
Yi-Shao Lai,
Yi-Shao Lai
Advanced Semiconductor Engineering, Inc., Kaohsiung, Taiwan
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Jenn-Ming Song,
Jenn-Ming Song
National Dong Hwa University, Hualien, Taiwan
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Hsiao-Chuan Chang,
Hsiao-Chuan Chang
Advanced Semiconductor Engineering, Inc., Kaohsiung, Taiwan
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Ying-Ta Chiu
Ying-Ta Chiu
Advanced Semiconductor Engineering, Inc., Kaohsiung, Taiwan
Search for other works by this author on:
Yi-Shao Lai
Advanced Semiconductor Engineering, Inc., Kaohsiung, Taiwan
Jenn-Ming Song
National Dong Hwa University, Hualien, Taiwan
Hsiao-Chuan Chang
Advanced Semiconductor Engineering, Inc., Kaohsiung, Taiwan
Ying-Ta Chiu
Advanced Semiconductor Engineering, Inc., Kaohsiung, Taiwan
Paper No:
IMECE2007-41232, pp. 305-311; 7 pages
Published Online:
May 22, 2009
Citation
Lai, Y, Song, J, Chang, H, & Chiu, Y. "Characterizations of Ball Impact Responses of Tin-Silver-Copper Solder Joints Doped With Nickel or Germanium." Proceedings of the ASME 2007 International Mechanical Engineering Congress and Exposition. Volume 5: Electronics and Photonics. Seattle, Washington, USA. November 11–15, 2007. pp. 305-311. ASME. https://doi.org/10.1115/IMECE2007-41232
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