Halide chemical vapor deposition is used to grow thick SiC epilayers at high growth rate. In this paper we present simulation of HCVD process in a horizontal hot wall reactor. A reaction mechanism for Si-C-Cl-H system is proposed for deposition of SiC using SiCl4/C3H8/H2 mixture. A model for transport of momentum and energy is developed to determine the gas field velocity and temperature distribution. Chemical reactions in the gas phase and on the substrate surface are incorporated into the transport model for predicting gas species transport and deposition. The effects of graphite etching are also accounted for in the model. Numerical simulation is performed to predict growth rate of the film as a function of temperature and gaseous species flow rates.

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