A field-effect transistor is developed on PDMS microchannel to control flow in microfluidic chips by modifying the surface charge condition. By applying a gate voltage to one side of the microchannel wall, zeta potential at that side is altered, while the zeta potential at the other side is maintained at the original value. This non-uniform zeta potential results in a secondary electroosmotic flow in lateral direction, which is used for flow control in microchannel geometries. The flow control is observed both quantitatively and qualitatively at relatively low voltage (less than 50 [V]), and this local flow control is primarily due to the leakage current through the interface between PDMS and glass layers. To verify the experimental results, a leakage capacitance model is introduced to estimate the modified zeta potential for the straight channel case, and excellent agreement is obtained between the predicted and experimental zeta potential results.
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ASME 2006 International Mechanical Engineering Congress and
Exposition
November 5–10, 2006
Chicago, Illinois, USA
Conference Sponsors:
- Fluids Engineering Division
ISBN:
0-7918-4770-5
PROCEEDINGS PAPER
Local Flow Control Using a Field Effect Transistor Available to Purchase
Prashanta Dutta
Prashanta Dutta
Washington State University
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Keisuke Horiuchi
Hitachi, Ltd
Prashanta Dutta
Washington State University
Paper No:
IMECE2006-13635, pp. 53-58; 6 pages
Published Online:
December 14, 2007
Citation
Horiuchi, K, & Dutta, P. "Local Flow Control Using a Field Effect Transistor." Proceedings of the ASME 2006 International Mechanical Engineering Congress and Exposition. Fluids Engineering. Chicago, Illinois, USA. November 5–10, 2006. pp. 53-58. ASME. https://doi.org/10.1115/IMECE2006-13635
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