This paper describes a thermoelectric infrared (IR) microsensor which is designed and fabricated using commercial CMOS IC processes with subsequent bulk-micromachining technology. The key feature of this sensor is that the thermocouples have been placed under the IR absorbing membrane. This infrared microsensor has the advantages of high fill factor, low noise equivalent temperature difference (NETD), and broad bandwidth. Finite element analysis has been conducted to simulate the heat transfer behavior of the device and to demonstrate the feasibility of our design. Besides, the experimental setup has been built for measuring the infrared sensor response. The results show a measured responsivity of 63 V/W and a thermal time constant of 10 ms.
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ASME 2005 International Mechanical Engineering Congress and Exposition
November 5–11, 2005
Orlando, Florida, USA
Conference Sponsors:
- Microelectromechanical Systems Division
ISBN:
0-7918-4224-X
PROCEEDINGS PAPER
Design and Fabrication of a CMOS-MEMS Thermoelectric Infrared Microsensor
Da-Hong Chiou,
Da-Hong Chiou
National Tsing Hua University
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Keng-Shun Lin,
Keng-Shun Lin
National Tsing Hua University
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Rongshun Chen
Rongshun Chen
National Tsing Hua University
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Ke-Min Liao
National Tsing Hua University
Da-Hong Chiou
National Tsing Hua University
Keng-Shun Lin
National Tsing Hua University
Rongshun Chen
National Tsing Hua University
Paper No:
IMECE2005-80806, pp. 465-471; 7 pages
Published Online:
February 5, 2008
Citation
Liao, K, Chiou, D, Lin, K, & Chen, R. "Design and Fabrication of a CMOS-MEMS Thermoelectric Infrared Microsensor." Proceedings of the ASME 2005 International Mechanical Engineering Congress and Exposition. Microelectromechanical Systems. Orlando, Florida, USA. November 5–11, 2005. pp. 465-471. ASME. https://doi.org/10.1115/IMECE2005-80806
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