Plasma-enhanced chemical vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and MEMS (MicroElectroMechanical Systems) to form electrical and/or mechanical components. In this paper, a novel nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young’s modulus of PECVD SiOx films on silicon wafers. Theoretically, we considered both the substrate deformation and residual stress in the thin film and derived a closed formula of deflection versus load. The formula fitted the experimental curves almost perfectly, from which the residual stresses and Young’s modulus of the film were determined. Experimentally, freestanding microbridges made of PECVD SiOx films were fabricated using the silicon undercut bulk micromachining technique. The results showed that the as-deposited PECVD SiOx films had a residual stress of −155±17 MPa and a Young’s modulus of 74.8±3.3 GPa.
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ASME 2005 International Mechanical Engineering Congress and Exposition
November 5–11, 2005
Orlando, Florida, USA
Conference Sponsors:
- Microelectromechanical Systems Division
ISBN:
0-7918-4224-X
PROCEEDINGS PAPER
A Nanoindentation-Based Microbridge Testing Method for Mechanical Characterization of Thin Films for MEMS Applications
Tong-Yi Zhang,
Tong-Yi Zhang
Hong Kong University of Science and Technology
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Xin Zhang
Xin Zhang
Boston University
Search for other works by this author on:
Zhiqiang Cao
Boston University
Tong-Yi Zhang
Hong Kong University of Science and Technology
Xin Zhang
Boston University
Paper No:
IMECE2005-80288, pp. 221-228; 8 pages
Published Online:
February 5, 2008
Citation
Cao, Z, Zhang, T, & Zhang, X. "A Nanoindentation-Based Microbridge Testing Method for Mechanical Characterization of Thin Films for MEMS Applications." Proceedings of the ASME 2005 International Mechanical Engineering Congress and Exposition. Microelectromechanical Systems. Orlando, Florida, USA. November 5–11, 2005. pp. 221-228. ASME. https://doi.org/10.1115/IMECE2005-80288
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