Traditional photolithography has a resolution at wavelength scale due to optical diffraction. In this paper, a high-density direct photolithography method beyond diffraction limit by utilizing surface plasmons (SPs) was developed on virtually any substrate. Simulation results by Finite Different Time Domain (FDTD) method have shown that surface plasmon excited on both the mask and the substrate helps to confine the light behind the apertures of the mask. Numerical simulations have demonstrated that very high density sub-wavelength patterns can be transferred using this method. In experiments, a polarized laser beam of 355nm wavelength was used as a light source to photo-initiate a 80nm-thick photoresist on a silicon substrate with 50nm Ti coating. 100nm line aperture patterns were made on gold film on quartz substrate as mask. Experimental results showed that illumination intensity control is crucial to the lithography results. The feature size using such method could be further scaled down, limited theoretically by the validity of dielectric function of the material, and practically by the fabrication of mask.
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ASME 2005 International Mechanical Engineering Congress and Exposition
November 5–11, 2005
Orlando, Florida, USA
Conference Sponsors:
- Manufacturing Engineering Division and Materials Handling Division
ISBN:
0-7918-4223-1
PROCEEDINGS PAPER
Surface Plasmon Assisted Laser Nanolithography Using Metalic Mask
Dongbing Shao,
Dongbing Shao
University of Texas at Austin
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Shanchen Chen
Shanchen Chen
University of Texas at Austin
Search for other works by this author on:
Dongbing Shao
University of Texas at Austin
Shanchen Chen
University of Texas at Austin
Paper No:
IMECE2005-82741, pp. 995-999; 5 pages
Published Online:
February 5, 2008
Citation
Shao, D, & Chen, S. "Surface Plasmon Assisted Laser Nanolithography Using Metalic Mask." Proceedings of the ASME 2005 International Mechanical Engineering Congress and Exposition. Manufacturing Engineering and Materials Handling, Parts A and B. Orlando, Florida, USA. November 5–11, 2005. pp. 995-999. ASME. https://doi.org/10.1115/IMECE2005-82741
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