Thin films (0.85μm, 3μm) of Ta2O5 deposited on Si and SiO2 were heated to 900°C. Their reflectance in the infrared was measured using an FTIR (Fourier Transform Infrared Spectrometer) equipped with a multiple angle reflectometer before and after exposure to high temperature. An interfacial layer (TaSixOy) formed by the diffusion of Si from the substrate into the deposited film was observed using Auger depth profiling, and the effect of this interfacial layer on the reflectance was measured. Using a least squares optimization technique coupled with an optical admittance algorithm, the multiple angle reflectance data was used to calculate the optical constants of the as deposited Ta2O5 film, crystalline Ta2O5, and the interfacial layer in the 1.6μm to 10μm range. The interfacial layer formed due to exposure to high temperature was found to be more absorptive than the crystalline Ta2O5.
Change in Radiative Optical Properties of Tantalum Pentoxide Thin-Films Due to Material Compositional Changes at High Temperature
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Chandrasekharan, R, Prakash, S, Masel, RI, & Shannon, MA. "Change in Radiative Optical Properties of Tantalum Pentoxide Thin-Films Due to Material Compositional Changes at High Temperature." Proceedings of the ASME 2005 International Mechanical Engineering Congress and Exposition. Heat Transfer, Part B. Orlando, Florida, USA. November 5–11, 2005. pp. 751-758. ASME. https://doi.org/10.1115/IMECE2005-80643
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