Silicon-to-silicon wafer bonding by sol-gel intermediate layer has been performed using acid-catalyzed tetraethylthosilicate-ethanol-water sol solution. High bond strength near to the fracture strength of bulk silicon is obtained at low temperature, for example 100°C. However, The bond efficiency and bond strength of this intermediate layer bonding sharply decrease when the bonding temperature increases to elevated temperature, such as 300 °C. The degradation of bond quality is found to be related to the decomposition of residual organic species at elevated bonding temperature. The bubble generation and the mechanism of the high bond strength at low temperature are exploited.

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