In this paper, we explored the development of porous polysilicon as a free-standing structure in MEMS. Being turned porous by electrochemical porous etching “after” it is deposited on typical insulators, the process is well suited for integration with many processes including typical polysilicon surface micromachining. Free-standing porous polysilicon microstructures have been successfully fabricated. Stress in porous polysilicon thin film, generated in porous etching, can be released by short time annealing at 700°C. Etching rate and Young’s modulus of porous polysilicon are characterized. As a demonstration of the applicability of porous polysilicon in MEMS, two types of self-closed microchannels are fabricated using porous polysilicon as the channel wall.

This content is only available via PDF.
You do not currently have access to this content.