We present a single-mask single-crystal silicon (SCS) process for the fabrication of suspended MicroElectroMechanical devices (MEMS). This is a bulk micro-machining process that uses Deep Reactive Ion Etch (DeepRIE) of a silicon-on-insulator (SOI) substrate with highly doped device layer to fabricate movable single-crystal silicon MEMS structures, which can be electrically actuated without metal deposition. The buried oxide layer is not removed afterwards and no wet process release is involved in the whole process sequence, which makes this process different from others works based on SOI wafer. Several MEMS oscillators have been made using this process. Dynamic behavior is characterized using a laser vibrometer. Quality factor is improved by more than 1 order compared to the same oscillator made using SCREAM process.

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