Temperature distributions and thermal stress distributions in a semi-transparent GSO crystal during Czochralski (CZ) single crystal growth were numerically investigated by thermal radiation heat transfer analysis and anisotropy stress analysis. As GSO has special optical properties, such as semi-transparency at a wavelength shorter than 4.5 μm, thermal radiation heat transfer was calculated by the Monte Carlo method. These calculations showed that thermal stress is caused by the radial temperature distribution on the outside of the upper part of the crystal. To reduce this temperature distribution, the following three manufacturing conditions were found to be effective: use a sharp taper angle of the crystal, install a lid to the top of the insulator, and install a ring around the tapered part of the crystal.
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ASME 2004 International Mechanical Engineering Congress and Exposition
November 13–19, 2004
Anaheim, California, USA
Conference Sponsors:
- Heat Transfer Division
ISBN:
0-7918-4711-X
PROCEEDINGS PAPER
Analysis to Reduce Thermal Stress in Oxide Single Crystal During Czochralski Growth Available to Purchase
Hiroyuki Ishibashi,
Hiroyuki Ishibashi
Hitachi Chemical Company, Ltd.
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Kazuhisa Kurashige,
Kazuhisa Kurashige
Hitachi Chemical Company, Ltd.
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Akihiro Gunji
Akihiro Gunji
Hitachi Chemical Company, Ltd.
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Shigeki Hirasawa
Hitachi, Ltd.
Hiroyuki Ishibashi
Hitachi Chemical Company, Ltd.
Kazuhisa Kurashige
Hitachi Chemical Company, Ltd.
Akihiro Gunji
Hitachi Chemical Company, Ltd.
Paper No:
IMECE2004-59134, pp. 347-352; 6 pages
Published Online:
March 24, 2008
Citation
Hirasawa, S, Ishibashi, H, Kurashige, K, & Gunji, A. "Analysis to Reduce Thermal Stress in Oxide Single Crystal During Czochralski Growth." Proceedings of the ASME 2004 International Mechanical Engineering Congress and Exposition. Heat Transfer, Volume 3. Anaheim, California, USA. November 13–19, 2004. pp. 347-352. ASME. https://doi.org/10.1115/IMECE2004-59134
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