The direct synthesis and self-assembly of silicon nanowires to yield a two-terminal, nano-to-micro integrated system has been demonstrated. The process takes advantage of localized heating to initiate and sustain a bottom up nanowire synthesis mechanism. As soon as the nanowire synthesis process is complete, the integrated system is ready for characterization of mechanical and electrical properties as well as functionalization for sensing applications. The process is CMOS compatible and eliminates the nano-to-micro contact formation process that is currently required of traditional processes.

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