In this paper, an integrated model considering induction heating, heat transfer, growth kinetics and thermo-elastic stress has been developed to study temperature distribution in the growth system, crystal shape and stress distribution in the asgrown aluminum nitride (AIN) crystal. The electromagnetic field and induction heat generation are calculated by the Maxwell equations. Transient temperature distribution in the growth chamber is simulated by energy accounting for conduction/radiation within and between various components. To reduce thermal stress and dislocation, a growth method to enlarge the ingot diameter from a smaller seed and maintain low thermal stress in the crystal has been proposed. The thermo-elastic stress fields have been calculated for several designed temperature profiles along the crucible inner wall and stress distribution has been correlated to dislocation density distribution.
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ASME 2003 International Mechanical Engineering Congress and Exposition
November 15–21, 2003
Washington, DC, USA
Conference Sponsors:
- Heat Transfer Division
ISBN:
0-7918-3718-1
PROCEEDINGS PAPER
Design and Optimization of an Aluminum Nitride Sublimation Growth System
Bei Wu,
Bei Wu
State University of New York at Stony Brook, Stony Brook, NY
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Ronghui Ma,
Ronghui Ma
State University of New York at Stony Brook, Stony Brook, NY
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Hui Zhang
Hui Zhang
State University of New York at Stony Brook, Stony Brook, NY
Search for other works by this author on:
Bei Wu
State University of New York at Stony Brook, Stony Brook, NY
Ronghui Ma
State University of New York at Stony Brook, Stony Brook, NY
Hui Zhang
State University of New York at Stony Brook, Stony Brook, NY
Paper No:
IMECE2003-41980, pp. 207-216; 10 pages
Published Online:
May 12, 2008
Citation
Wu, B, Ma, R, & Zhang, H. "Design and Optimization of an Aluminum Nitride Sublimation Growth System." Proceedings of the ASME 2003 International Mechanical Engineering Congress and Exposition. Heat Transfer, Volume 3. Washington, DC, USA. November 15–21, 2003. pp. 207-216. ASME. https://doi.org/10.1115/IMECE2003-41980
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