The traveling solvent method (TSM) is a relatively new and promising technique for the production of high quality semiconductors. TSM has been tested on many alloys producing pure and homogeneous crystals. In the present study the effect of buoyancy convection on the growth of the Si0.15Ge0.85 crystal grown by the traveling solvent method is investigated under different heating conditions. The full Navier-Stokes equations together with the energy and solutal equations were solved numerically using the finite element technique. The model take into consideration the losses of heat by radiation and the use of the phase diagram to determine the silicon concentration at the growth interface. Results revealed a strong convection in the solvent, which in turn is detrimental to the growth uniformity in the crystal rod. Additional numerical results showed that the convective heat transfer significantly influences the solute distribution in the liquid zone and the growth rate increases substantially.

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