In a single-mask standard photolithography based process and a single etch step, lateral silicon nanowires are fabricated according to arbitrary layout and over a range of diameters and lengths. Nanowires with diameters from ∼20 nm and with lengths ranging from 2 μm to 100 μm were fabricated in direct contact with two silicon probing pads for measurement. These nanowires are electrically isolated in the silicon-on-insulator wafer device layer, and suspended over the substrate, thereby increasing thermal and electrical isolation. Because they are formed from single crystal silicon, minimal defects are expected. The addition of a polysilicon deposition and patterning further enhances the process by allowing coaxial silicon nanostructures.

This content is only available via PDF.
You do not currently have access to this content.