Abstract
The mean stresses of the single and multi-stacked film are experimentally investigated. After stacking several layers on a wafer, we measure the curvature on the wafer. Followed by peeling each layer stacked, we measure the curvature on the wafer, again. Mean residual stresses are calculated from radiuses of the curvatures using the Stoney’s equation[1]. Microcantilever beams is constructed by removing substrate and the deflection at the end of a beam is measured.
Finite element method for determining residual stress distribution in multi-stacked films with a multi-step doping process is studied for use in micromachining applications. We propose a finite element program for residual stress analysis (RESA) in multi-stacked polysilicon film. The distribution of residual stress field in multi-stacked films is predicted using RESA. And it is established for the prediction method determining the deflection in a cantilever beam using finite element method (FEM).
